Optical and mechanical properties of PIAD deposited HfO2 single layers
材料科学
光电子学
计算机科学
作者
Giedrius Abromavičius,Remigijus Juškėnas
标识
DOI:10.1117/12.3026740
摘要
Single HfO2 layers were deposited on fused silica substrates using Hf as a starting material by PIAD technology. Inductively coupled RF plasma source was used, generating pure oxygen, as well as argon-oxygen mixture plasma. Mean plasma ion energies were varied from ~120 to ~270 eV. Optical properties, stress values, direct absorption for 1064 nm, surface roughness, film structure were determined for the samples and were also compared to pure e-beam and IBS formed HfO2 single layers. It is shown, that by selecting proper plasma parameters it's possible to obtain HfO2 layer with 185 MPa compressive stress, suitable for making dense multilayer coatings with moderate compressive stresses. However, simultaneously obtained high optical absorption and extinction implies necessity for further investigations.