异质结
材料科学
吞吐量
带隙
光电子学
纳米技术
计算机科学
操作系统
无线
作者
Weibin Zhang,Jie Guo,Xiankui Lv,Fuchun Zhang
标识
DOI:10.1021/acs.jpclett.4c01013
摘要
We present a novel target-driven methodology devised to predict the Heyd–Scuseria–Ernzerhof (HSE) band gap of two-dimensional (2D) materials leveraging the comprehensive C2DB database. This innovative approach integrates machine learning and density functional theory (DFT) calculations to predict the HSE band gap, conduction band minimum (CBM), and valence band maximum (VBM) of 2176 types of 2D materials. Subsequently, we collected a comprehensive data set comprising 3539 types of 2D materials, each characterized by its HSE band gaps, CBM, and VBM. Considering the lattice disparities between MoSi2N4 (MSN) and 2D materials, our analysis predicted 766 potential MSN/2D heterostructures. These heterostructures are further categorized into four distinct types based on the relative positions of their CBM and VBM: Type I encompasses 230 variants, Type II comprises 244 configurations, Type III consists of 284 permutations, and 0 band gap comprises 8 types.
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