The effect of terminal group of hole injection self-assembled monolayers on the performance of optoelectronic devices on ITO anodes

We demonstrate the effect on the performance of conventional (Indium tin oxide (ITO)/N,Nj-Di (1- naphthyl)-N,Nj-diphenyl-(1,1-biphenyl)-4,4-diamine (NPB)/Tris-(8-hydroxyquinoline)aluminum (Alq3)/LiF/Al) optoelectronic devices when the ITO surface is modified with various types of self-assembled monolayer (SAM)s such as 3-(trimethoxysilyl)propylamine (NH2SAM), Trimethoxy (propyl)silane CH3SAM, and Trimethoxy (3,3,3-trifluoropropyl)silane (F3SAM). The head functional group and chain configuration are trimethoxysilylpropyl (-(CH3O)3Si(CH2)2) and the tail groups distinguished SAMs (-NH2, -CH3, and -CF3). The contact angles of NH2SAM, CH3SAM, and F3SAM deposited on ITO and ITO were 70.7°, 81.42°, 68.23°, and 30.85°, respectively. The SAM-modified ITO's surface morphology Rpv and Rq parameters were reduced from 31.02 nm to 2.0 nm and 1.18 nm–0.26 nm. The work functions values of ITO, ITO/NH2SAM, ITO/CH3SAM and ITO/F3SAM measured by UPS were 4.99eV, 4.39, 5.09 and 5.69eV, respectively. The maximum luminance of the SAM-modified device increased to 166-fold, and the current density 105-fold, compared to the unmodified device when the operating voltage is set to 11 V. Current and power efficiency increased by 1.9 and 2-fold, respectively. The hole injection conditions are enhanced and the hole injection barrier height between ITO/NPB is reduced.