太赫兹辐射
材料科学
等离子体子
超材料
光电子学
超短脉冲
纳米光子学
激光器
电介质
平版印刷术
太赫兹光谱与技术
无定形固体
光学
物理
有机化学
化学
作者
Ying Zeng,Dunzhu Lu,Xingxing Xu,Xiaoqiuyan Zhang,Hujie Wan,Junqin Wang,Xuju Jiang,Xiaosheng Yang,Ming Xu,Qiye Wen,Jianquan Yao,Min Hu,Xinliang Zhang,Peining Li
标识
DOI:10.1002/adom.202202651
摘要
Abstract Chalcogenide phase‐change materials (PCMs) have offered an appealing material solution by acting as a switchable dielectric layer to tune the electromagnetic properties of terahertz metamaterials and metasurfaces. Here, this work demonstrates large‐scale and lithography‐free manufacturing of all‐PCM terahertz metasurfaces based on direct laser switching of crystalline micro‐domains in a thin film with high switching ratio of the emerging plasmonic PCM, In 3 SbTe 2 (IST). The fabricated high‐quality IST metasurfaces achieve efficient plasmonic resonances and a large modulation depth with ultrafast response (full width at half maxima of the modulation time ≈1.6 ps) in a deep‐subwavelength switching volume. For the dynamic evolution of terahertz resonance modes, theoretical modeling reveals a delicate interplay between amorphous and crystalline IST due to the bonding‐structure‐induced different carrier lifetimes and spatially localized electric fields. These studies open new avenues for realizing all‐PCM terahertz ultrafast nanophotonics.
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