极紫外光刻
平版印刷术
斯坦纳树问题
计算机科学
还原(数学)
布线(电子设计自动化)
失真(音乐)
临界尺寸
电子工程
光学
物理
工程类
数学优化
数学
放大器
嵌入式系统
CMOS芯片
几何学
作者
Sudipta Paul,Tridib Mukherjee,P. Banerjee,Susmita Sur‐Kolay
出处
期刊:Integration
[Elsevier]
日期:2023-09-01
卷期号:92: 66-76
标识
DOI:10.1016/j.vlsi.2023.04.007
摘要
The aggressive scaling down of the feature size in modern ICs has introduced major bottlenecks in printing layouts using a conventional 193nm immersion lithography system. As different mitigation techniques have reached their limitations, Next Generation Lithography (NGL) techniques have been gaining popularity. Extreme Ultra-violet Lithography (EUVL) system which uses light having 13.5nm wavelength is one of the popular NGL for printing features below 20nm. However, EUVL faces the problem of flare caused by irregular reflection from clear-field mask surfaces used. It leads to distortion of critical dimension (CD) during layout printing which in turn degrades the performance of the circuit. In this paper, we have formulated a delay-aware global routing problem in order to minimize flare without sacrificing the delay. Two different solvers, namely ILP and SAT-SMT, are employed and the results are compared. Experimental results show a significant reduction in flare without much compromise on delay.
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