非阻塞I/O
材料科学
薄膜
异质结
氧化镍
正交晶系
制作
基质(水族馆)
旋涂
氧化物
蒸发
纳米技术
分析化学(期刊)
光电子学
光学
衍射
冶金
替代医学
化学
海洋学
病理
生物化学
热力学
催化作用
医学
物理
地质学
色谱法
作者
C. H. Raj Kishor,M Ruksana,T Amisha,P. M. Aneesh
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2023-08-17
卷期号:98 (9): 095957-095957
被引量:1
标识
DOI:10.1088/1402-4896/acf16c
摘要
Abstract The exceptional stability of metal oxide heterojunctions makes them worthy of the future. Here we report V 2 O 5 /NiO heterojunction device fabricated utilizing both physical and chemical deposition techniques. Orthorhombic V 2 O 5 thin films were grown by thermal evaporation technique using the V 2 O 5 nanostructures synthesized via reverse micelle method. Nickel oxide (NiO) thin films were deposited using the solution-processed spin coating technique. The structural, optical and morphological properties of the V 2 O 5 and NiO thin films were studied in detail. Highly transparent V 2 O 5 /NiO heterojunction was fabricated on FTO coated glass substrate with a device geometry of FTO/NiO/V 2 O 5 /Ag. The electrical properties were studied and the J-V curve shows a rectifying nature with a rectification ratio of 12 at a bias voltage of 0.7 V and a knee voltage of 0.58 V. The variation of the ideality factor is studied in different linear regions of the ln (J)- V curve. From the C-V characteristics of the device, a built-in potential of 0.54 V was obtained.
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