空位缺陷
钻石
氮气
电子
原子物理学
电荷(物理)
电子束处理
辐照
化学
Crystal(编程语言)
结晶学
物理
核物理学
有机化学
量子力学
计算机科学
程序设计语言
作者
Chikara Shinei,Hiroshi Abe,Takeshi Ohshima,Tokuyuki Teraji
标识
DOI:10.1016/j.diamond.2023.110523
摘要
Effects of monovacancy formation on the charge states of nitrogen vacancy (NV) centers in nitrogen-doped diamond single crystal were investigated. Monovacancies are formed using high-energy electron beam irradiation. The ratio of the concentration of negatively charged nitrogen vacancy (NV−) centers to the total concentration of NV− centers and neutral nitrogen vacancy (NV0) centers decreases with increased concentration of monovacancies. This decrease occurs because of the reduction of the concentration of neutral substitutional nitrogen [Ns0] donating electrons to NV0 centers. Findings indicate that numerous electrons of Ns0 are transferred preferentially to monovacancies, not to NV0 centers.
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