(Invited) Growth and Characterization of 200 mm SiC Crystals and Substrates

SiC power device technology has over the past years continued to gain massive interest in automotive and industrial applications. Most devices are today fabricated on 150 mm diameter substrates while the 200 mm diameter substrates are still at early stage in both development and in terms of mass production. In this paper, we report the latest progress on STMicroelectronics 200 mm diameter crystals and substrates. To handle the mechanism behind the crystal growth process you need to control the temperature and pressure in the customized graphite growth chamber. We detail the methods that allow to characterize the quality of the ingot by monitoring the relevant properties both related to the grown crystal and to the produced substrate. We also describe the key parameters to be controlled on the substrate to be sure it is suitable for device making (i.e. mechanical behavior, resistivity, surface roughness, effectiveness of the surface preparation).