Controllable preparation of ultrathin GeSe nanosheets for infrared photodetection

In this paper, high quality 2D GeSe nanosheets are successfully synthesized using Se powder and Ge powder as raw materials by chemical vapor deposition method. The area of the prepared GeSe nanosheet is up to 300 μm2 and the thinnest thickness is 8.9 nm. The carrier mobility of the GeSe photodetector is 4.22 cm2/Vs, while the highest photoresponsivity reaches 434.78 A/W under 450 nm, and the highest photoresponsivity is 7.35 A/W with a response time of 39 ms under infrared light, which presents extremely sensitive performance for infrared detection.