材料科学
光电探测器
光探测
钝化
量子点
制作
光电子学
配体(生物化学)
纳米技术
图层(电子)
受体
化学
生物化学
医学
病理
替代医学
作者
Xiao Wang,Zhulu Song,Haodong Tang,Yiwen Li,Huaying Zhong,Jiufeng Wu,Weichao Wang,Simin Chen,Wenjie Zhang,Fan Fang,Junjie Hao,Dan Wu,Peter Müller‐Buschbaum,L. H. Cao,Zeguo Tang,Jun Tang,Lei Zhang,Kai Wang,Wei Chen
标识
DOI:10.1021/acsami.4c05201
摘要
PbS quantum dots (QDs) are promising for short-wave infrared (SWIR) photodetection and imaging. Solid-state ligand exchange (SSLE) is a low-fabrication-threshold QD solid fabrication method. However, QD treatment by SSLE remains challenging in seeking refined surface passivation to achieve the desired device performance. This work investigates using NaAc in the ligand exchange process to enhance the film morphology and electronic coupling configuration of QD solids. By implementing various film and photodetector device characterization studies, we confirm that adding NaAc with a prominent adding ratio of 20 wt % NaAc with tetrabutylammonium iodide (TBAI) in the SSLE leads to an improved film morphology, reduced surface roughness, and decreased trap states in the QD solid films. Moreover, compared to the devices without NaAc treatment, those fabricated with NaAc-treated QD solids exhibit an enhanced performance, including lower dark current density (<100 nA/cm
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