InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer

High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm and ∼2.6 μm, respectively. At a bias voltage of −100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 μm, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 × 1010 cm·Hz1/2/W (at a peak responsivity of 2.1 μm) under −100 mV applied bias at 300 K.