反铁磁性
物理
凝聚态物理
电导率
电阻率和电导率
电子
缩放比例
量子力学
几何学
数学
作者
Hisashi Kotegawa,Hiroto Tanaka,Yuta Takeuchi,Hideki Tou,Hitoshi Sugawara,Junichi Hayashi,Keiki Takeda
标识
DOI:10.1103/physrevlett.133.106301
摘要
Appropriate symmetry breaking generates an anomalous Hall (AH) effect, even in antiferromagnetic (AFM) materials. Itinerant magnets with d electrons are typical examples that show a significant response. By contrast, the process by which a response emerges from f-electron AFM structures remains unclear. In this Letter, we show that an AFM material, Ce_{2}CuGe_{6}, yields a large AH conductivity (AHC) of 550 Ω^{-1} cm^{-1}, which exceeds the values previously reported in d-electron AFM materials. Observed features, including the scaling relation against electrical conductivity, suggest that this AH transport is induced cooperatively by both intrinsic and extrinsic mechanisms derived from the AFM structure.
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