绝缘体上的硅
谐振器
材料科学
光学
硅
弯曲半径
Q系数
波导管
光电子学
低语长廊波浪
半径
半导体
硅光子学
弯曲
物理
复合材料
计算机科学
计算机安全
作者
J. Niehusmann,A. Vörckel,P. Haring Bolívar,T. Wahlbrink,W. Henschel,H. Kurz
出处
期刊:Optics Letters
[The Optical Society]
日期:2004-12-15
卷期号:29 (24): 2861-2861
被引量:283
摘要
The development of ultrahigh-quality-factor (Q) silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented. An analytical description is derived, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics. Propagation losses as low as 1.9 +/- 0.1 dB/cm in a curved waveguide with a bending radius of 20 microm and a Q factor as high as 139.000 +/- 6.000 are demonstrated. These are believed to be the highest values reported for a curved SOI waveguide device and for any directly structured semiconductor microring fabricated without additional melting-induced surface smoothing.
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