鞠躬
密度泛函理论
晶格常数
带隙
局部密度近似
格子(音乐)
凝聚态物理
材料科学
电子能带结构
合金
放松(心理学)
电子结构
热力学
物理
计算化学
化学
量子力学
衍射
哲学
复合材料
社会心理学
神学
声学
心理学
作者
Weixing Shu,Xia Zhang,Qi Wang,Yongqing Huang,Xiaomin Ren
标识
DOI:10.1109/sopo.2010.5504408
摘要
Using first-principles total energy calculations, we have studied the structural and electronic properties of GaN x As 1-x alloys within density-functional theory (DFT) framework. The validity of Local density approximation (LDA) and generalized gradient approximation (GGA) has been demonstrated by the calculations of lattice parameters and band-gap bowing. The results show that LDA is relatively more suitable for calculations of GaNAs alloy. The lattice constant calculated decreases in line with vegard's law in contrast to that the band gap has big composition-dependent bowing parameters. The effects of relaxed atoms and bonds have also been discussed. The relaxation contributes significantly to band-gap bowing.
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