磨合
烧伤
可靠性(半导体)
可靠性工程
烧毁
计算机科学
薄脆饼
工程类
医学
外科
量子力学
临床心理学
电气工程
物理
功率(物理)
标识
DOI:10.1002/(sici)1099-1638(199811/12)14:6<417::aid-qre220>3.0.co;2-w
摘要
This paper presents a conceptual model of burn-in decision making which gives an optimal burn-in time for semiconductor devices and describes how burn-in affects total yield and reliability. For the gate oxide of integrated circuits we consider four burn-in policies: no burn-in, wafer-level burn-in only, package-level burn-in only and wafer-level burn-in prior to package-level burn-in. A decision-making model to minimize cost is given for each burn-in policy. Burn-in time is strongly limited by the cost factor and reliability requirements. In order to reduce the cost incurred in burn-in, a short test time and small test samples are recommended. Copyright © 1998 John Wiley & Sons, Ltd.
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