CRACKING OF GaN FILMS

The cracking of GaN films and the associated cracking of substrates are described. The geometry, structure, and evolution of fracture demonstrate that GaN films crack under tensile stress during growth and are subsequently overgrown and partially healed. The film cracks channel along the (1010) GaN planes and also extend a distance of ~5 μm into the sapphire substrate. These incipient cracks in the substrate form a set of initial flaws that leads to complete fracture through the sapphire during cooling for sufficiently thick films. Each stage of this cracking behavior is well described by a fracture mechanics model that delineates a series of critical thicknesses for the onset of cracking that are functions of the film and substrate stresses, thicknesses, and elastic properties. Similar cracking behavior is found to occur independently of the choice of substrate between sapphire and SiC and is traced to a tensile stress generation mechanism early in the growth process, such as that provided by island coalescence. Cracking is the dominant stress relief mechanism, as opposed to dislocation generation or diffusion, because of the island growth mode and because of optimized growth temperatures at or below the brittle-to-ductile transition. Lateral epitaxial overgrowth (LEO) of GaN is shown to minimize substrate fracture even though film cracking remains unaffected. This effect explained in terms of the limits placed on the initial extent of insipient substrate cracks due to the LEO geometry.