外延
材料科学
光电子学
制作
硅
纳米技术
图层(电子)
医学
病理
替代医学
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2009-07-10
卷期号:22 (1): 81-90
摘要
Selective epitaxial growth of Si and SiGe films has been applied to the fabrication of many high-performance MOSFETs, because new device structures can be realized by selective epitaxial growth. Selective growth of Si and SiGe at the source/drain region is the most well-known example. Selective growth on S/D region is especially important for FinFETs, which is one of the most promising candidate for future MOS devices. By using selective epitaxy of Si:C, precise device design can be realized. Multi-stacked structure, which is also a candidate for next-generation devices, can be fabricated with SiGe epitaxial growth.
科研通智能强力驱动
Strongly Powered by AbleSci AI