拉曼光谱
石墨烯
声子
石墨
兴奋剂
材料科学
电子
凝聚态物理
费米能级
相干反斯托克斯拉曼光谱
光谱学
拉曼散射
物理
光电子学
纳米技术
光学
量子力学
复合材料
标识
DOI:10.1016/j.ssc.2007.03.052
摘要
Abstract We review recent work on Raman spectroscopy of graphite and graphene. We focus on the origin of the D and G peaks and the second order of the D peak. The G and 2 D Raman peaks change in shape, position and relative intensity with number of graphene layers. This reflects the evolution of the electronic structure and electron–phonon interactions. We then consider the effects of doping on the Raman spectra of graphene. The Fermi energy is tuned by applying a gate-voltage. We show that this induces a stiffening of the Raman G peak for both holes and electrons doping. Thus Raman spectroscopy can be efficiently used to monitor number of layers, quality of layers, doping level and confinement.
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