电荷(物理)
半导体
传输(计算)
光电子学
材料科学
化学物理
原子物理学
化学
物理
计算机科学
量子力学
并行计算
作者
A. M. Fajardo,NS Lewis
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:1996-11-08
卷期号:274 (5289): 969-972
被引量:106
标识
DOI:10.1126/science.274.5289.969
摘要
Interfacial charge-transfer rate constants have been measured for n -type Si electrodes in contact with a series of viologen-based redox couples in methanol through analyses of the behavior of these junctions with respect to their current density versus potential and differential capacitance versus potential properties. The data allow evaluation of the maximum rate constant (and therefore the electronic coupling) for majority carriers in the solid as well as of the dependence of the rate constant on the driving force for transfer of delocalized electrons from the n -Si semiconducting electrode into the localized molecular redox species in the solution phase. The data are in good agreement with existing models of this interfacial electron transfer process and provide insight into the fundamental kinetic events underlying the use of semiconducting photoelectrodes in applications such as solar energy conversion.
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