三氧化钼
有机发光二极管
掺杂剂
兴奋剂
材料科学
二极管
联苯胺
光电子学
分析化学(期刊)
化学
钼
图层(电子)
纳米技术
有机化学
冶金
作者
Chun‐Hong Gao,Xiao‐Zhao Zhu,Lei Zhang,Dong‐Ying Zhou,Zhao‐Kui Wang,Liang‐Sheng Liao
摘要
Comparative studies on inorganic and organic electron acceptors used as p-dopants in N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB) in organic light-emitting diodes (OLEDs) are carried out. It demonstrates that 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) doped hole-injecting layer is superior to molybdenum trioxide (MoO3) doped one in device efficiency and stability. Combining with absorption spectral measurement, the effectiveness of a p-doped NPB in OLEDs does not solely rely on the generation of charge-transfer complexes in the doped NPB. The detailed difference between MoO3 and HAT-CN as p-dopants in NPB is further investigated by evaluating the hole injection efficiency, hole barrier height, and surface morphology of the doped films.
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