材料科学
钝化
堆积
钙钛矿(结构)
能量转换效率
化学工程
晶界
八面体
空位缺陷
兴奋剂
载流子寿命
化学物理
光电子学
纳米技术
结晶学
晶体结构
图层(电子)
复合材料
硅
有机化学
化学
微观结构
物理
工程类
作者
Xianzhao Wang,Dachang Liu,Ruichen Liu,Xiaofan Du,Bingqian Zhang,Xiuhong Sun,Chen Chen,Zhipeng Li,Qiangqiang Zhao,Zhipeng Shao,Xiao Wang,Guanglei Cui,Shuping Pang
标识
DOI:10.1002/aenm.202203635
摘要
Abstract The unavoidable iodine loss in the perovskite layer is closely related to carrier non‐radiative and device degradation. During the post‐annealing process, the fragile PbI bond is easy to break, leading to the formation of iodine vacancies and inducing stress‐driven structure collapse. Herein, a PbI 6 octahedra stabilization strategy via building robust grain boundary modification networks is developed. The introduction of conjugated structure into amides can significantly enhance their anchoring ability with PbI units, while the π–π stacking effect of benzamide enables a passivation network with polymer‐like effect. This is well evidenced by the excellent properties in eliminated iodine loss and stabilized perovskite lattice. Therefore, benzamide modification not only transform the perovskite films from n‐type to p‐type by suppressing the iodine vacancy‐doping effect, but also reduces defect density, ultimately bringing the perovskite layer longer carrier diffusion length and better charge injection efficiency. Finally, the benzamide modified devices realize both high power conversion efficiency of 24.78% and excellent operating stability. Of particular note, the module efficiency with 14 cm 2 active area is over 21%.
科研通智能强力驱动
Strongly Powered by AbleSci AI