材料科学
热电效应
掺杂剂
热电材料
兴奋剂
电负性
原子单位
Atom(片上系统)
凝聚态物理
扫描透射电子显微镜
合金
结晶学
纳米技术
热导率
透射电子显微镜
光电子学
冶金
热力学
化学
复合材料
计算机科学
量子力学
物理
嵌入式系统
有机化学
作者
Youichirou Kawami,Xuan Quy Tran,Tomokazu Yamamoto,Satoru Yoshioka,Yasukazu Murakami,Syo Matsumura,Kazuhiro Nogita,Jin Zou
标识
DOI:10.1002/adma.202410508
摘要
Abstract The development of functional thermoelectric materials requires direct evidence of dopants’ locations to rationally design the electronic and phononic structure of the host matrix. In this study, Cs‐corrected scanning transmission electron microscopy and energy dispersive X‐ray spectroscopy is employed at the atomic scale to identify Cu atoms’ locations in a Cu‐doped SnTe thermoelectric alloy. It is revealed that Cu atoms in the rocksalt SnTe form solid solutions at both Sn and Te sites, contrary to their electronegativity order and the intentional Cu doping at Sn sites. Cu atoms are also located at the tetrahedral and crowdion sites of the face‐centred cubic structure, with varying degrees of correlations. Such high flexibility of Cu atoms in the rocksalt SnTe offers diverse phonon‐scattering mechanisms conducive to the ultra‐low lattice thermal conductivity of singly Cu‐doped SnTe. This study offers atomic‐scale insights for achieving more precise dopant engineering, leading to the accelerated development of functional thermoelectric materials.
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