Artificial optoelectronic synapses based on flexible and transparent oxide transistors

Abstract The development of artificial optoelectronic synapses utilizing flexible, and transparent oxide transistors is crucial for advancing neuromorphic computing and wearable electronics. Here, we propose artificial optoelectronic synapses on flexible and transparent devices based on an ion-gel gated oxide transistor. The device consists of indium-tin-oxide/ion-gel thin film conformity fabricated on a polyethylene terephthalate substrate. The device exhibited a loop opening in current–voltage properties, and its operating mechanism was ascribed to charge trapping and de-trapping. The neuromorphic behaviors can also be simulated by this device for instance, namely ultraviolet (UV) induced short-term memory, long-term memory, paired-pulse facilitation, and learning/forgetting behaviors. Additionally, electrical habituation and UV potentiation were executed. This work paves the way for the realization of low-cost flexible and transparent synaptic wearable electronics.