神经形态工程学
纳米线
兴奋性突触后电位
Spike(软件开发)
计算机科学
频道(广播)
材料科学
突触后电流
CMOS芯片
信号处理
抑制性突触后电位
电子工程
人工神经网络
光电子学
神经科学
计算机体系结构
计算机硬件
人工智能
工程类
电信
生物
软件工程
数字信号处理
作者
Junchi Liu,Chengpeng Jiang,Huanhuan Wei,Zixian Wang,Lin Sun,Song Zhang,Youxuan Ni,Shangda Qu,Yang Lü,Wentao Xu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-04-03
卷期号:24 (15): 4336-4345
标识
DOI:10.1021/acs.nanolett.3c04391
摘要
This study demonstrates the conceptual design and fabrication of a vertically integrated monolithic (VIM) neuromorphic device. The device comprises an n-type SnO2 nanowire bottom channel connected by a shared gate to a p-type P3HT nanowire top channel. This architecture establishes two distinct neural pathways with different response behaviors. The device generates excitatory and inhibitory postsynaptic currents, mimicking the corelease mechanism of bilingual synapses. To enhance the signal processing efficiency, we employed a bipolar spike encoding strategy to convert fluctuating sensory signals to spike trains containing positive and negative pulses. Utilizing the neuromorphic platform for synaptic processing, physiological signals featuring bidirectional fluctuations, including electrocardiogram and breathing signals, can be classified with an accuracy of over 90%. The VIM device holds considerable promise as a solution for developing highly integrated neuromorphic hardware for healthcare and edge intelligence applications.
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