A 500 V Super Field Plate LIGBT With Excellent Voltage Blocking Capability

The concept and basic theory of Super Field Plate (SuFP) technique is proposed and systematically investigated in our previous work. In this work, the performance of SuFP technique is experimentally studied for the first time based on a lateral insulated gate bipolar transistor (LIGBT). Our investigations proposed a SuFP design method that can achieve charge balance effect in the whole drift region with the existence of the substrate assistant depletion effect. As a result, the SuFP-LIGBT with 30μm drift region achieved uniform electric field distribution and 563.6V breakdown voltage (BV). And the Baliga's figure of merit (FOM) is improved by 90.6% due to the improvement of BV. It is noteworthy that the voltage blocking capability of the SuFP-LIGBT reaches 18.8V/μm and is almost the same as that of the super junction technique. Furthermore, as a kind of field plate, the SuFP technique is fully compatible with fabrication processes and would not increase the fabrication cost. Therefore, the SuFP-LIGBT has excellent voltage blocking capability and the SuFP is a promising technique for LIGBT.