量子点
光电子学
发光二极管
二极管
材料科学
像素
色域
亮度
电致发光
光学
图层(电子)
物理
纳米技术
作者
Tingtao Meng,Yueting Zheng,Denglin Zhao,Hailong Hu,Yangbin Zhu,Zhongwei Xu,Songman Ju,Jipeng Jing,Xiang Chen,Hongjin Gao,Kaiyu Yang,Tailiang Guo,Fushan Li,Junpeng Fan,Lei Qian
出处
期刊:Nature Photonics
[Springer Nature]
日期:2022-02-28
卷期号:16 (4): 297-303
被引量:119
标识
DOI:10.1038/s41566-022-00960-w
摘要
With the ever-growing demand for a greater number of pixels, next-generation displays have challenging requirements for resolution as well as colour gamut. Here, to meet this need, quantum-dot light-emitting diodes (QLEDs) with an ultrahigh pixel resolution of 9,072–25,400 pixels per inch are realized via transfer printing combined with the Langmuir–Blodgett film technology. To reduce the leakage current of the devices, a honeycomb-patterned layer of wide-bandgap quantum dots is embedded between the light-emitting quantum-dot pixels as a non-emitting charge barrier layer. Red and green QLEDs are demonstrated. Notably, the red devices achieve a brightness of up to 262,400 cd m−2 at an applied voltage of 8 V and a peak external quantum efficiency of 14.72%. This work provides a promising way for achieving ultrahigh-resolution QLED devices with high performance.
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