Interface-engineered Z-scheme of BiVO4/g-C3N4 photoanode for boosted photoelectrochemical water splitting and organic contaminant elimination under solar light

Although n-type bismuth vanadate (BiVO4) is regarded as an attractive solar-light-active photoanode, its short carrier-diffusion length, sluggish oxidation kinetics, low electronic conductivity, and high recombination rate are the major intrinsic shortcomings that limit its practical application. To this end, the rational design of a solar-light-active, metal-free BiVO4-based Z-scheme heterojunction photoanode is of great significance for achieving effective charge-separation features and maximum light utilization as well as boosting redox activity for efficient environmental treatment and photoelectrochemical water splitting. Herein, we propose a facile approach for the decoration of metal-free graphitic carbon nitride (g-C3N4) nanosheets on BiVO4 to form a Z-scheme BiVO4/g-C3N4 photoanode with boosted photoelectrochemical (PEC) water splitting and rapid photoelectrocatalytic degradation of methyl orange (MO) dye under simulated solar light. The successful preparation of the Z-scheme BiVO4/g-C3N4 photoanode was confirmed by comprehensive structural, morphological, and optical analyses. Compared with the moderate photocurrent density of bare BiVO4 (0.39 mA cm-2), the Z-scheme BiVO4/g-C3N4 photoanode yields a notable photocurrent density of 1.14 mA cm-2 at 1.23 V vs. RHE (≈3-fold higher) with the promising long-term stability of 5 h without any significant photo-corrosion. Moreover, the PEC dye-degradation studies revealed that the Z-scheme BiVO4/g-C3N4 photoanode successfully degraded MO (≈90%) in 75 min, signifying a 30% improvement over bare BiVO4. This research paves the way for rational interface engineering of solar-light-active BiVO4-based noble-metal-free Z-schemes for eco-friendly PEC water splitting and water remediation.