整改
二极管
肖特基二极管
光电子学
材料科学
异质结
肖特基势垒
步进恢复二极管
电压
电气工程
工程类
作者
Mi‐Mi Dong,Yue-Hong Liu,Chuan‐Kui Wang,Xiao‐Xiao Fu
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2023-09-28
卷期号:6 (19): 17464-17472
标识
DOI:10.1021/acsanm.3c02561
摘要
Since the diode is one of the common electronic components in modern semiconductor electronics, realizing diodes with superior and controllable rectifying behaviors based on two-dimensional materials is important for next-generation electronics. Herein, gate-tunable in-plane (IP) and out-of-plane (OP) heterojunction diodes composed of the semiconductive WGe2N4 and metallic TaSi2N4 are reported based on first-principles calculations. The interfacial properties and rectifying characteristics of the IP and OP heterojunction diodes are systematically investigated. The results demonstrate that the Schottky barrier in the IP diode is much larger than that in the OP diode, resulting in a smaller current of the IP diode. The IP diode exhibits a much higher rectification ratio of 107 than the OP diode of 104 under the zero gate voltage. Noticeably, the rectifying behaviors of both diodes can be effectively modulated by the gate voltages. The positive gate voltages increase the current of IP and OP Schottky diodes and improve the rectification ratio to 109 and 105, respectively. Moreover, the negative gate voltage makes the rectifying direction of the OP Schottky diode reverse with a rectification ratio larger than 106. Our results provide a reference for designing superior two-dimensional diodes with controllable rectifying behaviors and pave the way for the design of logic devices in the future.
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