Aberration budget analysis of EUV lithography from the imaging performance of contact layer in 5nm technology node

By analyzing the impact of aberration in an extreme ultraviolet lithography projector on the imaging indicators of the test patterns for a contact layer in a 5 nm technology node, this paper establishes a mathematical aberration model based on the back propagating neutral network. On the basis of an aberration model, a method for estimating the aberration budget is proposed, which can help reduce the difficulty of achieving imaging performance thresholds in actual production. The performance of the results given by this method is verified by using a rigorous simulation. The results show that the model is highly accurate in predicting an aberration distribution that meets the requirements through an inverse sensitivity analysis and can calculate the wavefront aberration margin based on imaging indicators.