High-performance Teraherz photodetection in 2D materials and topological materials

Abstract Photodetectors leveraging two-dimensional (2D) materials and topological materials have garnered substantial interest due to their exceptional electronic and optoelectronic characteristics. These materials, including 2D semimetals like graphene, semiconducting transition metal dichalcogenides, and topological insulators such as bismuth selenide, exhibit a broad array of bandgap values and unique photon interaction properties. To date, numerous high-performance photodetectors using these materials have been documented, showing significant potential in terahertz (THz) frequency applications. This review presents a comprehensive examination of photodetectors based on 2D and topological materials, focusing on the THz frequency. Initially, an insight into the photocurrent generation mechanisms within these materials is provided, alongside a discussion of the figure-of-merits, such as responsivity and detectivity, which are crucial for evaluating photodetector performance. The recent advancements in THz photodetection are then highlighted, noting exceptional attributes such as high sensitivity, ultrafast response, broad spectral operation, and anisotropic detection capabilities, based on cutting-edge devices. Early-stage applications and the integration potential of these photodetectors in various technologies are also explored. Concluding, the manuscript offers a forward-looking perspective, outlining ongoing challenges, future research directions, and practical advice for developing next-generation THz photodetectors, aiming to inspire continued innovation in this rapidly evolving field.