Interfacial defect healing of In2S3/Sb2(S,Se)3 heterojunction solar cells with a novel wide-bandgap InOCl passivator
异质结
带隙
材料科学
光电子学
图层(电子)
宽禁带半导体
太阳能电池
纳米技术
作者
Changxue Wang,Dongdong Li,Xiaoli Mao,Lei Wan,Zhen Cheng,Jun Zhu,Robert L. Z. Hoye,Ru Zhou
出处
期刊:Journal of materials chemistry. A, Materials for energy and sustainability [The Royal Society of Chemistry] 日期:2023-01-01卷期号:11 (37): 19914-19924被引量:13
标识
DOI:10.1039/d3ta01736b
摘要
A novel wide-bandgap InOCl passivator incorporated between In 2 S 3 buffer layer and Sb 2 (S,Se) 3 absorber enables high performance fully environment-friendly solar cells.