Monolithic Integration of 80-GHz Ge Photodetectors and 100-GHz Ge Electro-Absorption Modulators in a Photonic BiCMOS Technology

We demonstrate a photonic BiCMOS technology featuring waveguide (WG)-coupled germanium electro-absorption modulators (EAMs) and photodetectors with respective 3-dB bandwidths of 100 and 80 GHz, monolithically integrated with high-performance SiGe-heterojunction bipolar transistors (HBTs) and 0.25- $\mu \text{m}$ CMOS. The EAMs feature dynamic extinction ratios of 2.3 dB at a symbol rate of 112 GBaud at 1.8 $\text{V}_{\text {pp}}$ and $\lambda $ = 1590 nm. We demonstrate that there is no degradation of the baseline technology "SG25H5EPIC" in terms of electronic device yield or performance.