肖特基二极管
击穿电压
材料科学
光电子学
碳化硅
沟槽
兴奋剂
二极管
肖特基势垒
制作
电压
电场
宽禁带半导体
电气工程
纳米技术
物理
工程类
复合材料
医学
替代医学
图层(电子)
病理
量子力学
作者
Kuan Wang,Jun Yuan,Yangyang Wu,Fei Guo,Zhijie Cheng,Wei Chen,Ruoshi Peng
标识
DOI:10.1109/sslchinaifws60785.2023.10399743
摘要
A novel 1700 V 4H-SiC semi-superjunction(SJ) Schottky diode have been designed and simulated in this study to alleviat the tradeoff dilemma between specific on resistance and blocking voltage in SiC power devices. The proposed multi-step trenched structure could be realized by the self- aligned process, and the p-pillars are then formed through vertical implantation into the bottom of the trenches. This practical and cost-effective fabrication method ensures controllable trench morphology and uniform p-doping below each level of trenches. Composed of a 4 μm SJ region above a 6 μm drift region, the optimized SiC semi-SJ have achieved a breakdown voltage above 2000 V with a specific on- resistance as low as 0.997 mΩ·cm 2 , which breaks the theoretical 1-D limit of the SiC unipolar device. Furthermore, the proposed semi-SJ widens the implantation window by 37.5% compared to full-SJ, while realizing one order of magnitude lower leakage current due to the decreased surface electric field.
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