Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Metallization

This specification establishes the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging. It covers purity (metallic and non-metallic element impurities), grain size, inner quality (internal defect), bonding (backing plate, bonding ratio), configuration (dimension, tolerance, surface roughness), and appearance (surface cleanness). It also includes sampling, traceability, reliability, certification, and packaging requirements.