A Sub-1.4 dB Noise Figure 6-18 GHz Low Noise Amplifier Using 0.15 µm GaAs pHEMT Technology

This paper describes the design of a 6-18GHz ultrawideband low noise amplifier (LNA) based on 0.15 µm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The LNA generates flat gain, low noise figure, and acceptable input and output return losses from 6-18 GHz using a cascode structure, source degenerate inductors, and RLC negative feedback networks. Simulation results show that the noise figure is lower than 1. 4dB, the gain of the LNA is 24.5±1dB, and both input and output return losses are less than −10dB. The input 1dB compression point (IPldB) of the LNA is −10dBm.