MXenes公司
材料科学
记忆电阻器
纳米技术
电阻随机存取存储器
纳米材料
电极
电子工程
化学
工程类
物理化学
作者
Songtao Ling,Chenyang Zhang,Cheng Zhang,Min Teng,Chunlan Ma,Ju Gao,Xinran Yan,Yelong Pan,Yucheng Jiang,Yinzhong Wu,Yan Li
标识
DOI:10.1016/j.jssc.2022.123731
摘要
MXenes are emerging two-dimensional (2D) nanomaterials composed of transition metal carbides/nitrides/carbonitrides with several atomic layers. However, due to the analogous metallic conductivity, their development in the field of electronic devices is restricted. Recently, various etching methods of MXenes lead to the surface terminals containing different functional groups, which provides opportunities for further modification of MXene nanosheets and makes it possible to apply them in the field of electronic memristors. At present, there are few researches about memristors on the basis of MXene-polymer hybrid materials. Here, we synthesize Ti 3 C 2 T x -MXenes and adjust their content in an insulating polyvinyl alcohol (PVA) polymer for triggering memristive performance, which affords outstanding bipolar resistive switching behavior. The memristor exhibits the characteristics of low operating voltage, long retention time, high flexibility, and acceptable mechanical stability. In order to examine the switching mechanism of the device, the charge transport model simulation is implemented, which indicates that charge trapping effect is responsible for the non-volatile memristor performance of Ti 3 C 2 T x -PVA hybrid material. This work provides a simple strategy for preparing MXene-polymer hybrid materials and broadens the prospects of 2D MXenes in the field of non-volatile memory applications. A robust MXene-polymer hybrid material-based flexible memristor is reported, which demonstrates excellent bipolar resistive switching behavior, providing appealing opportunities for the further development and application of flexible and wearable electronics. • 2D MXene-based organic-inorganic hybrid material was designed for memristor device. • The outstanding bipolar resistive switching behavior of this hybrid material was achieved. • The robust flexibility and mechanical stability of memristor were successfully demonstrated.
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