铌
记忆电阻器
钽
材料科学
双极扩散
氧化物
电铸
纳米技术
制作
瞬态(计算机编程)
光电子学
电子工程
物理
电子
工程类
病理
操作系统
冶金
医学
替代医学
量子力学
图层(电子)
计算机科学
作者
John F. Sevic,Nobuhiko P. Kobayashi
摘要
Transient electroformation simulation of niobium oxide selectors, self-aligned to tantalum dioxide memristor structures, is described by a computational solution of the mass transport equation self-consistently coupled to the heat and electronic charge transport equations. Augmentation of an electrothermal drift-diffusion formulation by a thermally activated field-enhanced mass transport term self-consistently describes transient evolution ab initio of electric potential, temperature, and charge carrier density to model electroformation of our niobium oxide-tantalum dioxide selector-memristor structure. The present formulation requires no a priori current filament model. Simulated transient electroforming behavior of our as-fabricated self-aligned selectors illustrates that transient evolution of niobium oxide to its stable metallic phase produces a decrease in localized resistivity, initiating a self-limiting effect on spontaneous electroformation, suggesting a method to finely tailor electroformation processes by explicitly tuning pre-fabrication device design and post-fabrication electrical operations for optimum initial conditioning of selector structures.
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