材料科学
光电子学
有机场效应晶体管
有机半导体
光电探测器
响应度
晶体管
热电效应
光电二极管
场效应晶体管
载流子
纳米技术
电压
电气工程
物理
热力学
工程类
作者
Xiaochen Ren,Fangxu Yang,Xiong Gao,Shanshan Cheng,Xiaotao Zhang,Huanli Dong,Wenping Hu
标识
DOI:10.1002/aenm.201801003
摘要
Abstract The organic field‐effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low‐power‐consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy‐related applications, such as near‐infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field‐effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET‐ related energy topics, including low‐power‐consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.
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