Electronic Structure of Transparent Amorphous Oxide Semiconductors

This chapter describes the electronic structure of amorphous oxide semiconductors (AOSs). It explains why their electron mobility is so high, why they differ from amorphous Si in having a field-effect mobility that is not heavily degraded by localized tail states, what the critical defects in these oxides are and how to use third elements like Ga to control them, which defects cause the instabilities of thin-film transistors, and why there are presently no good p -type AOSs.