单层
过电位
二硫化钼
材料科学
催化作用
密度泛函理论
Atom(片上系统)
纳米技术
化学物理
化学
计算化学
电极
物理化学
电化学
复合材料
生物化学
计算机科学
嵌入式系统
作者
Jie Xu,Gonglei Shao,Xuan Tang,Fang Lv,Haiyan Xiang,Changfei Jing,Song Liu,Sheng Dai,Yanguang Li,Jun Luo,Zhen Zhou
标识
DOI:10.1038/s41467-022-29929-7
摘要
Abstract Defect engineering is an effective strategy to improve the activity of two-dimensional molybdenum disulfide base planes toward electrocatalytic hydrogen evolution reaction. Here, we report a Frenkel-defected monolayer MoS 2 catalyst, in which a fraction of Mo atoms in MoS 2 spontaneously leave their places in the lattice, creating vacancies and becoming interstitials by lodging in nearby locations. Unique charge distributions are introduced in the MoS 2 surface planes, and those interstitial Mo atoms are more conducive to H adsorption, thus greatly promoting the HER activity of monolayer MoS 2 base planes. At the current density of 10 mA cm −2 , the optimal Frenkel-defected monolayer MoS 2 exhibits a lower overpotential (164 mV) than either pristine monolayer MoS 2 surface plane (358 mV) or Pt-single-atom doped MoS 2 (211 mV). This work provides insights into the structure-property relationship of point-defected MoS 2 and highlights the advantages of Frenkel defects in tuning the catalytic performance of MoS 2 materials.
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