制作
硅
材料科学
杂质
金属
纳米技术
光电子学
冶金
化学
医学
病理
有机化学
替代医学
出处
期刊:Springer series in materials science
日期:1995-01-01
被引量:434
标识
DOI:10.1007/978-3-642-97593-6
摘要
This monograph describes the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency.
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