Study on characteristics of hybrid switch using Si IGBT and SiC MOSFET depending on external parameters

A hybrid switch configured by silicon insulated gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) have been investigated to be a cost effectiveness and high efficiency. In this paper, we aimed reducing the hybrid switch loss and expanding operation area of frequency and current. We measured dependency on various parameters to analyze characteristic of hybrid switch. Especially, we focused on Gate option, influence of parasitic inductance and antiparallel diode on Si IGBT. In addition, we proposed a new gate signal option using commutation for hybrid switch. Experimental results show that characteristics of hybrid switch with new gate option and the effects of commutation and external parameters on loss.