探测器
半导体
空间电荷
半导体探测器
载流子寿命
偏压
光电子学
辐射
载流子
瞬态(计算机编程)
电子迁移率
材料科学
激光器
电场
粒子探测器
耗尽区
半导体器件
电压
光学
物理
电子
硅
纳米技术
核物理学
操作系统
量子力学
图层(电子)
计算机科学
作者
Artem Musiienko,R. Grill,J. Pekárek,E. Belas,Petr Praus,Jindřich Pipek,V. Dědič,H. Elhadidy
摘要
A method is presented for the determination of the carrier drift mobility, lifetime, electric field distribution, and the dynamics of space charge formation, including the detrapping energy and capture cross-section of the dominant trap level in polarizing semiconductor radiation detectors. The procedure stems from the laser-induced transient current measurements done at a steady-state and pulsed biasing and at variable temperature. The approach allows us the direct determination of detector parameters from measured data without a complex mathematical treatment. The detrimental effect of surface carrier recombination often hampering the evaluation of detector properties is eliminated. Lifetime worsening caused by the space charge formation is included. The usefulness of the procedure is demonstrated on a CdTe radiation detector.
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