记忆电阻器
神经形态工程学
计算机科学
人工神经网络
记忆晶体管
非线性系统
窗口函数
人工智能
算法
电阻随机存取存储器
电子工程
电压
物理
工程类
电气工程
电信
量子力学
光谱密度
作者
Jiawei Xu,Deyu Wang,Feng Li,Lianhao Zhang,Dimitrios Stathis,Yu Yang,Yi Jin,Anders Lansner,Ahmed Hemani,Zhuo Zou,Li‐Rong Zheng
标识
DOI:10.1109/aicas51828.2021.9458424
摘要
This paper proposes a concise window function to build a memristor model, simulating the widely-observed nonlinear dopant drift phenomenon of the memristor. Exploiting the non-linearity, the memristor model is applied to the in-situ neuromorphic solution for a cortex-inspired spiking neural network (SNN), spike-based Bayesian Confidence Propagation Neural Network (BCPNN). The improved memristor model utilizing the proposed window function is able to retain the boundary effect and resolve the boundary lock and inflexibility problem, while it is simple in form that can facilitate large-scale neuromorphic model simulation. Compared with the state-of-the-art general memristor model, the proposed memristor model can achieve a 5.8× reduction of simulation time at a competitive fitting level in cortex-comparable large-scale software simulation. The evaluation results show an explicit similarity between the non-linear dopant drift phenomenon of the memristor and the BCPNN learning rule, and the memristor model is able to emulate the key traces of BCPNN with a correlation coefficient over 0.99.
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