红外线的
非线性光学
材料科学
各向异性
空位缺陷
盐(化学)
光电子学
非线性系统
化学
光学
结晶学
物理化学
物理
量子力学
作者
Shao‐Min Pei,Bin‐Wen Liu,Xiao‐Ming Jiang,Ya-Qian Zou,Wen‐Fa Chen,Qiu-Nan Yan,Guo‐Cong Guo
标识
DOI:10.1021/acs.chemmater.1c03046
摘要
Achieving large phase-matchable (PM) nonlinear optical (NLO) efficiency and high laser-induced damage threshold (LIDT) in an infrared second-order NLO (IR NLO) material is the most crucial technical endeavor but the most challenging. A synergetic strategy of modulating NLO functional motifs and vacancy sites for excellent comprehensive performances is proposed. The application of such a strategy in salt-inclusion systems affords two chalcogenides [K4Cl][CdGa9Q16] (Q = S, 1; Se, 2), which possess the important merits of a practical IR NLO material, including large PM NLO efficiency (0.9 and 2.4 × AgGaS2) and high LIDTs (22.6 and 7.7 × AgGaS2). Remarkably, compound 2 has the strongest SHG intensity among all known PM salt-inclusion chalcogenides. In addition, the strategy also enhances the structural anisotropy and renders 2 the first PM one among all known NLO salt-inclusion selenides. This work provides a novel design approach of the IR NLO material much more superior than other unique modulations.
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