石墨烯
钝化
原子层沉积
材料科学
氧化石墨烯纸
X射线光电子能谱
氧化物
石墨烯泡沫
单层
纳米技术
图层(电子)
化学工程
金属
石墨烯纳米带
基面
化学
冶金
结晶学
工程类
作者
Michaël Mazza,Miguel Cabán-Acevedo,Harold J. Fu,Madeline C. Meier,Annelise C. Thompson,Zachary P. Ifkovits,Azhar I. Carim,Nathan S. Lewis
标识
DOI:10.1021/acsmaterialsau.1c00049
摘要
Passivating defective regions on monolayer graphene with metal oxides remains an active area of research for graphene device integration. To effectively passivate these regions, a water-free atomic layer deposition (ALD) recipe was developed and yielded selective-area ALD (sa-ALD) of mixed-metal oxides onto line defects in monolayer graphene. The anisotropically deposited film targeted high-energy defect sites that were formed during synthesis or transfer of the graphene layer. The passivating layer exceeded 10 nm thickness with minimal deposition onto the basal plane of graphene. The mixed-metal oxide film was of comparable quality to films deposited using nonselective water-based ALD methods, as shown by X-ray photoelectron spectroscopy. The development of sa-ALD techniques to target defect regions on the graphene sheet, while keeping the basal plane intact, will provide a new mechanism to passivate graphene defects and modify the electronic and physical properties of graphene.
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