材料科学
光电探测器
暗电流
光电子学
光电二极管
异质结
基质(水族馆)
比探测率
活动层
图层(电子)
纳米技术
薄膜晶体管
海洋学
地质学
作者
Sixing Xiong,Jing Li,Jiali Peng,Xinyun Dong,Fei Qin,Wen Wang,Lulu Sun,Yalun Xu,Qianqian Lin,Yinhua Zhou
标识
DOI:10.1002/adom.202101837
摘要
Abstract To obtain high‐performance organic near‐infrared (NIR) photodetectors, it is essential to suppress the noise current. Here, high‐performance organic NIR photodetectors based on a multilayered structure fabricated by a water transfer printing strategy are reported. These devices comprise a NIR small molecule electron‐accepting layer (IEICO‐4F) and several repeating polymers stacked electron‐donating layers (PTB7‐Th). These polymer layers are prepared onto water substrate and transferred to the target substrate directly, working as an electron‐donating moiety and also as an electron blocking layer. The water transfer printing fabricated multilayered NIR photodetectors obtain extremely low noise current by suppressing the reverse dark current and decreasing the carriers trapping/de‐trapping. The NIR organic photodiodes with multilayered structure exhibit a noise current as low as about 27 fA Hz − 1/2 at − 0.5 V, resulting in a specific detectivity of approaching 10 12 Jones at the NIR wavelength of 860 nm that is about 3 orders of magnitude higher than that of the control devices with a bulk‐heterojunction structure. Furthermore, the multilayered NIR photodetectors also exhibit a large linear dynamic range, fast response simultaneously. This proposed multilayered structure and the utilization of the water transfer printing method could help create high‐performance organic photodetectors.
科研通智能强力驱动
Strongly Powered by AbleSci AI