Narrowband HgCdTe infrared photodetector with integrated plasmonic structure

The application of plasmonic structure has been demonstrated to improve the performance of infrared photodetectors. However, the successful experimental realization of the incorporation of such optical engineering structure into HgCdTe-based photodetectors has rarely been reported. In this paper, we present a HgCdTe infrared photodetector with integrated plasmonic structure. The experimental results show that the device with plasmonic structure has a distinct narrowband effect with a peak response rate close to 2 A/W, which is nearly 34% higher compared with the reference device. The simulation results are in good agreement with the experiment, and an analysis of the effect of the plasmonic structure is given, demonstrating the crucial role of the plasmonic structure in the enhancement of the device performance.