Suppressing the Intrinsic Photoelectric Response of Organic Semiconductors for Highly‐Photostable Organic Transistors

Abstract Suppressing the photoelectric response of organic semiconductors (OSs) is of great significance for improving the operational stability of organic field‐effect transistors (OFETs) in light environments, but it is quite challenging because of the great difficulty in precisely modulating exciton dynamics. In this work, photostable OFETs are demonstrated by designing the micro‐structure of OSs and introducing an electrical double layer at the OS/polyelectrolyte dielectric interface, in which multiple exciton dynamic processes can be modulated. The generation and dissociation of excitons are depressed due to the small light‐absorption area of the microstripe structure and the excellent crystallinity of OSs. At the same time, a highly efficient exciton quenching process is activated by the electrical double layer at the OS/polyelectrolyte dielectric interface. As a result, the OFETs show outstanding tolerance to the light irradiation of up to 306 mW·cm −2 , which far surpasses the solar irradiance value in the atmosphere (≈138 mW·cm −2 ) and achieves the highest photostability ever reported in the literature. The findings promise a general and practicable strategy for the realization of photostable OFETs and organic circuits.