异质结
材料科学
光电子学
外延
薄脆饼
费米气体
宽禁带半导体
大气温度范围
热传导
霍尔效应
电子迁移率
凝聚态物理
电阻率和电导率
电子
纳米技术
图层(电子)
物理
工程类
量子力学
气象学
电气工程
复合材料
作者
Yat Hon Ng,Zheyang Zheng,Li Zhang,Ruizi Liu,Tao Chen,Sirui Feng,Qiming Shao,Kevin J. Chen
摘要
The p-GaN/AlGaN/GaN heterostructure, predominantly epitaxially grown on large-scale silicon wafers, has been widely used for producing consumer power switching devices and recently manifested favorable for developing GaN-based complementary devices and circuits. This work investigates the hole distribution and transport in this structure based on wide-temperature-range (20–600 K) Hall measurements and TCAD simulations. It is revealed that the p-channel thereof is composed of the bulk holes in the p-GaN and the two-dimensional hole gas (2DHG) at the p-GaN/AlGaN interface, and both substantially contribute to the lateral p-type conduction at room temperature. Their complementary temperature responses lead to conductivity enhancement at both high- and low-temperature regimes. The high-density (1.2 × 1013 cm−2) 2DHG is formed owing to the polarization-induced potential well and the ionization of the Mg acceptors that thermally diffused into the barrier during the epi-growth. Such ionized Mg acceptors would partially deplete the two-dimensional electron gas (2DEG) at the access region in the n-channel side where the p-GaN is removed and result in a trade-off between the carrier density of 2DHG and 2DEG.
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